保护胶AR-PC 5040
用于硅片晶圆正面湿法深刻蚀时背面保护胶
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用于硅片晶圆正面湿法深刻蚀时背面保护胶
点击数:19
PMMA薄膜只能用有机溶剂型显影液显影。水性碱性显影液对于PMMA无效,它不会腐蚀PMMA ,PMMA甚至在强碱性溶液中可以用作保护涂层(→保护涂层AR-PC 503和AR-PC 504用于KOH蚀刻)。对于PMMA电子束光刻的标准工艺条件,推荐使用MIBK和异丙醇组成的显影液。两种浓度的配方可供选择:MIBK:IPA=1:3(AR 600-56)以及MIBK:IPA=2:3(AR 600-55)。AR 600-55是更强的显影液,这意味着相同曝光条件的PMMA层显影速度更快。较弱的AR 600-56提供稍高的对比度。
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电子束光刻胶(电子束光阻或电子束抗蚀剂):用于电子束和深紫外光源应用于集成电路制造、主要用于掩模制造的光刻胶。这些光刻胶通常的膜厚度值为200至500 nm之间并在掩模及晶圆上实现100至500 nm的结构。
电子束光刻胶还用于电子束直写多层胶工艺中。这些通常是薄胶<100nm非常适合用于纳米光刻。通过工艺方案的优化,即使是在膜厚度为50 nm时,也可以获得厚度小于10 nm的结构。 它们的特点是对硅,玻璃和大多数金属具有很好的附着力。通过旋涂在6000至1000 rpm之间进行涂覆,可以获得厚度在20 nm至1.75 µm之间的薄膜。对于特殊的电子束应用,甚至可以达到10μm的膜厚值(AR-P 6510)。
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用于电镀、MEMS技术和 LIGA ≥50 μm 的紫外负胶厚胶
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用于电镀、MEMS技术和 LIGA ≤ 20 μm 的紫外负胶厚胶
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用于电镀、MEMS技术和 LIGA ≤ 20 μm 的紫外负胶厚胶
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用于电镀、MEMS技术和 LIGA ≤ 20 μm 的紫外负胶厚胶
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用于集成电路生产的高灵敏度紫外负胶
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适用于各种应用的即用型负性喷涂光刻胶
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