在法国的 FEMTO-ST 研究所,使用 AR-7520.17new 在 400nm 的厚度下实现了非常均匀和光滑的 300nm 线条。在接下来的蚀刻应用中,光刻胶图形可以以优异的质量转移到 Si 衬底中。由于使用的等离子体(ICP,SF6:C4F8)具有良好的抗蚀刻性,因此可以实现 12:1 的选择性。
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电子束负胶的百科信息
在法国的 FEMTO-ST 研究所,使用 AR-7520.17new 在 400nm 的厚度下实现了非常均匀和光滑的 300nm 线条。在接下来的蚀刻应用中,光刻胶图形可以以优异的质量转移到 Si 衬底中。由于使用的等离子体(ICP,SF6:C4F8)具有良好的抗蚀刻性,因此可以实现 12:1 的选择性。
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随着电子束光刻技术的发展,迫切需要一种分辨率约为30 nm的工艺稳定并且具有足够灵敏度的电子束光刻胶,以加速电子束光刻技术的进步。化学放大电子束光刻胶可以满足对高灵敏度的所有要求,但目前仅实现 > 100 nm的分辨率。PMMA光刻胶和非化学放大电子束光刻胶(例如AR-N 7500或AR-N 7520)有可能达到 < 30 nm的分辨率,但这些光刻胶不够灵敏,其直写时间是的其应用的写入时间成本较高。
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Allresist设计了一种电子束光刻胶,可根据所使用的相应曝光剂量产生三维光刻胶轮廓。对于以常规的图案化为目的的曝光,光刻胶只能得到二维轮廓。光刻胶层呈现出要么完全保留,要么完全去除,而光刻胶膜的高度或多或少与结构无关。然而,如果需要将阶梯状结构转移到衬底中,例如在衍射光学中,光刻胶必须针对不同的曝光剂量做出响应。所有常规光刻胶的这种类似“数字化”特性都经过优化以提供尽可能获得高的对比度,以实现最大的分辨率。这导致较小的剂量差异无法在光刻中呈现出差异。我们可以认为这种图案化类似黑白照片。然而,为了获得三维结构,还需要灰色特征。因此,我们优化了AR-N 7700产品,一种化学放大的电子束负胶。
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SX AR-N 7730/37是一款全新的化学放大(CAR)电子束光刻胶产品。这种光刻胶具有非常高的灵敏度,同时具有很高的工艺稳定性。因此可以显著提高溶液和胶层的稳定性。前段时间,我们报道了高灵敏度电子束光刻胶SX AR-N 7700/37的开发。过去的一个问题是分辨率太低,只有300 nm。现在分辨率已得到显著提高,同时保留所有其他优点。
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自1992年以来,我们以适中的价格为客户提供高质量的产品。得益于高效的研究部门和我们对客户需求的密切沟通,我们可以快速响应市场需求并持续提供创新性的产品。
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中国 北京(100096)
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